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 SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION *With TO-3 package *High DC current gain *Low saturation voltage *High Safe Operating Area APPLICATIONS *Designed for high power audio, disk head positioners and other linear applications. *These devices can also be used in power switching circuits such as relay or solenoid drivers, DC-DC converters or inverters.
PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION
2N5498
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total Power Dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 150 130 7 15 4 200 150 -65~200 UNIT V V V A A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT /W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP.
2N5498
SYMBOL
MAX
UNIT
VCEO(SUS) VCER VCEsat-1 VCEsat-2 ICEO ICEX IEBO hFE fT
Collector-emitter sustaining voltage
IC=0.2A ;IB=0 IC=0.2A ;RBE=100Ohm IC=8A; IB=0.8A IC=15A ;IB=3A VCE=130V; IB=0 VCE=130V; VBE(off)=1.5V TC=150 VEB=7V; IC=0 IC=15A ; VCE=5V IC=1A ; VCE=10V
130
V
Collector-emitter sustaining voltage
150
V
Collector-emitter saturation voltage
1.4
V
Collector-emitter saturation voltage
4.0
V
Collector cut-off current
2.0 2.0 10.0 1.0
mA
Collector cut-off current
mA
Emitter cut-off current
mA
DC current gain
10
50
Transition frequency
1
MHz
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2N5498
Fig.2 outline dimensions (unindicated tolerance:0.10mm)
3


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